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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1447 DESCRIPTION *With TO-220 package *High breakdown voltage *High transition frequency APPLICATIONS *For color TV chroma output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.15 20 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10A ;IE=0 IC=10mA ;IB=0 IE=10A ;IC=0 IC=50mA ;IB=5mA VCB=250V;IE=0 VEB=5V; IC=0 IC=50mA ; VCE=10V IC=10mA ; VCE=30V 40 MIN 300 300 7 2SC1447 TYP. MAX UNIT V V V 2.0 1.0 1.0 170 80 V A A MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1447 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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